Analysis of carrier capture and escape in InGaAsP/InP quantum well lasers

被引：1

作者：

Plyavenek, AG ^{[1
]}

Lyubarskii, AV ^{[1
]}

机构：

[1] MOSCOW INST RADIO ENGN ELECT & AUTOMAT,UNITED OPTOELECT LAB,MOSCOW 117454,RUSSIA

来源：

15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST | 1996年

关键词：

D O I：

10.1109/ISLC.1996.553767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：101 / 102

页数：2

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