Analysis of carrier capture and escape in InGaAsP/InP quantum well lasers

被引：1
|
作者：
Plyavenek, AG [1 ]
Lyubarskii, AV [1 ]
机构：
[1] MOSCOW INST RADIO ENGN ELECT & AUTOMAT,UNITED OPTOELECT LAB,MOSCOW 117454,RUSSIA
来源：
15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST | 1996年
关键词：
D O I：
10.1109/ISLC.1996.553767
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：101 / 102
页数：2
相关论文
共 50 条
  • [31] PURE STRAIN EFFECT ON DIFFERENTIAL GAIN OF STRAINED INGAASP/INP QUANTUM-WELL LASERS
    SEKI, S
    YAMANAKA, T
    LIU, W
    YOSHIKUNI, Y
    YOKOYAMA, K
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (05) : 500 - 503
  • [32] 1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures
    A. V. Lyutetskii
    N. A. Pikhtin
    S. O. Slipchenko
    Z. N. Sokolova
    N. V. Fetisova
    A. Yu. Leshko
    V. V. Shamakhov
    A. Yu. Andreev
    E. G. Golikova
    Yu. A. Ryaboshtan
    I. S. Tarasov
    Semiconductors, 2003, 37 : 1356 - 1362
  • [33] HOLE CAPTURE RATE OF GAINAS/INP STRAINED-QUANTUM-WELL LASERS
    HIRAYAMA, H
    ASADA, M
    OPTICAL AND QUANTUM ELECTRONICS, 1994, 26 (07) : S719 - S729
  • [34] Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum-well lasers
    Gilard, O
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) : 1884 - 1888
  • [35] High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers
    Wang Yang
    Qiu Ying-Ping
    Pan Jiao-Qing
    Zhao Ling-Juan
    Zhu Hong-Liang
    Wang Wei
    CHINESE PHYSICS LETTERS, 2010, 27 (11)
  • [36] Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures
    Raisky, OY
    Wang, WB
    Alfano, RR
    Reynolds, CL
    APPLIED PHYSICS LETTERS, 2001, 79 (03) : 430 - 432
  • [37] QUANTUM CAPTURE AND ESCAPE IN QUANTUM-WELL LASERS - IMPLICATIONS ON DIRECT MODULATION BANDWIDTH LIMITATIONS
    KAN, SC
    VASSILOVSKI, D
    WU, TC
    LAU, KY
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) : 428 - 431
  • [38] STRAIN AND QUANTUM-CONFINEMENT EFFECTS ON DIFFERENTIAL GAIN OF STRAINED INGAASP/INP QUANTUM-WELL LASERS
    SEKI, S
    YOKOYAMA, K
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 4242 - 4244
  • [39] EFFECT OF QUANTUM CARRIER AND ESCAPE TIME ON FREQUENCY CHIRP IN MULTIPLE-QUANTUM-WELL LASERS
    WARTAK, MS
    MAKINO, T
    CHEN, Y
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1149 - 1153
  • [40] A carrier escape study from InP/InGaAs single quantum well solar cells
    Zachariou, A
    Barnes, J
    Barnham, KWJ
    Nelson, J
    Tsui, ESM
    Epler, J
    Pate, M
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) : 877 - 881
12345