MODELLING OF QUANTUM WIRES IN THE INTERFACE LAYER OF THE SEMICONDUCTOR-OXIDE STRUCTURES WITH CHARGE BUILT IN OXIDE

被引：0
|
作者：
Atamuratov, A. E. [1 ]
机构：
[1] Urganch State Univ, Urganch, Uzbekistan
来源：
COMPLEX PHENOMENA IN NANOSCALE SYSTEMS | 2009年
关键词：
Quantum wires; Semiconductor nanostructures; Charge density; HETEROSTRUCTURES; SURFACE; SIO2;
D O I：
10.1007/978-90-481-3120-4_22
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this we study formation of it nanoscale potential well with nanowires near the oxide-semiconductor interface by special a charge distribution built-in in oxide. The SiO2-Si structure with a cylindrical substrate covered by a coaxial oxide layer is considered. The dependence of the potential well parameters oil the geometry, size and built-in chargee density is analyzed. The case of two charged rings also is considered. Parallel rings is also considered
引用
收藏
页码：229 / 236
页数：8
相关论文
共 50 条
  • [31] Photochemical charge transfer and trapping at the interface between an organic adlayer and an oxide semiconductor
    Henderson, MA
    White, JM
    Uetsuka, H
    Onishi, H
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (49) : 14974 - 14975
  • [32] Quantum mechanical influence on flat-band capacitance in metal-oxide-semiconductor structures with a nanometer-thick silicon oxide film and the impact of oxide charge evaluation
    Shimizu, A
    Nakatsuji, H
    Omura, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (2A): : 557 - 561
  • [33] On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures
    Moencha, Winfried
    APPLIED PHYSICS LETTERS, 2007, 91 (04)
  • [34] Functionality of the ferroelectric/oxide semiconductor interface
    Radiant Technologies, Inc, Albuquerque, United States
    Appl Surf Sci, (413-417):
  • [35] Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
    Punkkinen, M. P. J.
    Laukkanen, P.
    Lang, J.
    Kuzmin, M.
    Tuominen, M.
    Tuominen, V.
    Dahl, J.
    Pessa, M.
    Guina, M.
    Kokko, K.
    Sadowski, J.
    Johansson, B.
    Vayrynen, I. J.
    Vitos, L.
    PHYSICAL REVIEW B, 2011, 83 (19):
  • [36] Functionality of the ferroelectric/oxide semiconductor interface
    Evans, JT
    Suizu, RI
    Boyer, LL
    APPLIED SURFACE SCIENCE, 1997, 117 : 413 - 417
  • [37] FLUCTUATION THEORY OF SURFACE-STATES IN METAL-OXIDE SEMICONDUCTOR STRUCTURES WITH A BULK DISTRIBUTION OF THE OXIDE CHARGE
    USEINOV, RG
    ZEBREV, GI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (11): : 1255 - 1258
  • [38] MODELING OF CHARGE-INJECTION EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    AVNI, E
    SHAPPIR, J
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 734 - 742
  • [39] Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system
    Majumder, S.
    Kumari, K.
    Ray, S. J.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (05):
  • [40] Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system
    S. Majumder
    K. Kumari
    S. J. Ray
    Applied Physics A, 2023, 129
12345