MODELLING OF QUANTUM WIRES IN THE INTERFACE LAYER OF THE SEMICONDUCTOR-OXIDE STRUCTURES WITH CHARGE BUILT IN OXIDE

被引：0
|
作者：
Atamuratov, A. E. [1 ]
机构：
[1] Urganch State Univ, Urganch, Uzbekistan
来源：
COMPLEX PHENOMENA IN NANOSCALE SYSTEMS | 2009年
关键词：
Quantum wires; Semiconductor nanostructures; Charge density; HETEROSTRUCTURES; SURFACE; SIO2;
D O I：
10.1007/978-90-481-3120-4_22
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this we study formation of it nanoscale potential well with nanowires near the oxide-semiconductor interface by special a charge distribution built-in in oxide. The SiO2-Si structure with a cylindrical substrate covered by a coaxial oxide layer is considered. The dependence of the potential well parameters oil the geometry, size and built-in chargee density is analyzed. The case of two charged rings also is considered. Parallel rings is also considered
引用
收藏
页码：229 / 236
页数：8
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