Magnetoresistance in a hybrid ferromagnetic/semiconductor device

被引：11

作者：

Papp, G. ^{[1
,2
]}

Peeters, F. M. ^{[3
]}

机构：

[1] Univ W Hungary, Inst Phys & Electrotech, H-9400 Sopron, Hungary

[2] Univ Szeged, Dept Theoret Phys, H-6720 Szeged, Hungary

[3] Univ Antwerpen CGB, Dept Fys, B-2020 Antwerp, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期

关键词：

ballistic transport; ferromagnetic materials; magnetoresistance; semiconductor devices; two-dimensional electron gas; 2-DIMENSIONAL ELECTRON-GAS; HALL-EFFECT DEVICE; MAGNETIC BARRIERS; BALLISTIC REGIME; RESISTANCE; TRANSPORT;

D O I：

10.1063/1.3359652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip.

引用

页数：4

共 50 条

[41] Giant unidirectional spin Hall magnetoresistance in topological insulator - ferromagnetic semiconductor heterostructures
Nguyen Huynh Duy Khang
Pham Nam Hai
JOURNAL OF APPLIED PHYSICS, 2019, 126 (23)
[42] Colossal magnetoresistance of the inhomogeneous ferromagnetic semiconductor HgCr2Se4
N. I. Solin
V. V. Ustinov
S. V. Naumov
Physics of the Solid State, 2008, 50
[43] Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
Tanaka, M
Higo, Y
PHYSICAL REVIEW LETTERS, 2001, 87 (02) : 1 - 026602
[44] Magnetoresistance of Ce3Cu3Sb4: ferromagnetic semiconductor
Paulose, P.L.
Patil, Sujata
Journal of Applied Physics, 1997, 81 (8 pt 2B):
[45] Magnetoresistance of Ce3Cu3Sb4: Ferromagnetic semiconductor
Paulose, PL
Patil, S
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 5777 - 5777
[46] Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
Higo, Y
Shimizu, H
Tanaka, M
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6745 - 6747
[47] Quantum size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures
Ohya, Shinobu
Hai, Pham Nam
Mizuno, Yosuke
Tanaka, Masaaki
PHYSICAL REVIEW B, 2007, 75 (15)
[48] Possible magnetoresistance effect in abrupt ferromagnetic semiconductor n-n heterojunction
Jing, Yu-Lan
Tang, Xiao-Li
Zhang, Huai-Wu
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (07): : 1193 - 1196
[49] Local Hall effect in hybrid ferromagnetic/semiconductor devices
Hong, Jinki
Joo, Sungjung
Kim, Tae-Suk
Rhie, Kungwon
Kim, K. H.
Kim, S. U.
Lee, B. C.
Shin, Kyung-Ho
APPLIED PHYSICS LETTERS, 2007, 90 (02)
[50] Observation of giant magnetoresistances in hybrid semiconductor/ferromagnetic devices
Overend, N.
Nogaret, A.
Gallagher, B.L.
Main, P.C.
Henini, M.
Wirtz, R.
Newbury, R.
Marrows, C.H.
Howson, M.A.
Beaumont, S.P.
Journal of Magnetism and Magnetic Materials, 1998, 177-181 (Pt 2) : 898 - 899

← 1 2 3 4 5 →