Magnetoresistance in a hybrid ferromagnetic/semiconductor device

被引：11

作者：

Papp, G. ^{[1
,2
]}

Peeters, F. M. ^{[3
]}

机构：

[1] Univ W Hungary, Inst Phys & Electrotech, H-9400 Sopron, Hungary

[2] Univ Szeged, Dept Theoret Phys, H-6720 Szeged, Hungary

[3] Univ Antwerpen CGB, Dept Fys, B-2020 Antwerp, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期

关键词：

ballistic transport; ferromagnetic materials; magnetoresistance; semiconductor devices; two-dimensional electron gas; 2-DIMENSIONAL ELECTRON-GAS; HALL-EFFECT DEVICE; MAGNETIC BARRIERS; BALLISTIC REGIME; RESISTANCE; TRANSPORT;

D O I：

10.1063/1.3359652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip.

引用

页数：4

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