Single Event Upset Characterization of the Stratix IV Field Programmable Gate Array Using Proton Irradiation

被引：0

作者：

Chen, Qingyu ^{[1
]}

Chen, Li ^{[1
]}

Hiemstra, David M. ^{[2
]}

Kirischian, Valeri ^{[2
]}

机构：

[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK, Canada

[2] MDA, Brampton, ON L6S 4J3, Canada

来源：

2018 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2018年

基金：

加拿大自然科学与工程研究理事会;

关键词：

single event upset; SRAM FPGA; proton irradiation; Stratix IV;

D O I：

暂无

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Proton induced SEU cross-sections of certain functional blocks of the Stratix IV FPGA are presented. Upset rates in the space radiation environment are estimated.

引用

页码：316 / 320

页数：5

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