Single Event Upset Characterization of the Stratix IV Field Programmable Gate Array Using Proton Irradiation

被引：0
|
作者：
Chen, Qingyu [1 ]
Chen, Li [1 ]
Hiemstra, David M. [2 ]
Kirischian, Valeri [2 ]
机构：
[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK, Canada
[2] MDA, Brampton, ON L6S 4J3, Canada
来源：
2018 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2018年
基金：
加拿大自然科学与工程研究理事会;
关键词：
single event upset; SRAM FPGA; proton irradiation; Stratix IV;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Proton induced SEU cross-sections of certain functional blocks of the Stratix IV FPGA are presented. Upset rates in the space radiation environment are estimated.
引用
收藏
页码：316 / 320
页数：5
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