FE simulation of InGaN QD formation at the edge of threading dislocation in GaN

被引：1

作者：

Dluzewski, Pawel ^{[1
]}

Belkadi, Amina ^{[1
]}

Chen, Jun ^{[2
]}

Ruterana, Pierre ^{[3
]}

Nouet, Gerard ^{[3
]}

机构：

[1] Polish Acad Sci, Inst Fundamental Technol Res, Swietokrzyska 21, PL-00049 Warsaw, Poland

[2] LRPMN, Damigny, France

[3] SIFCOM, CNRS, ENSICAEN, UMR 6176, F-14050 Caen, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674870

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The stress induced diffusion process of In-Ga segregation in InxGa1-xN layer deposited on GaN is simulated step by step by using a 3D nonlinear FE method. From the thermodynamical point of view this process is governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses we consider is the set of threading dislocations examined in the plane view HRTEM investigation of GaN layer deposited on sapphire. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2403 / +

页数：2

共 50 条

[31] Electronic structure and metallization effects at threading dislocation cores in GaN
Belabbas, I.
Chen, J.
Nouet, G.
COMPUTATIONAL MATERIALS SCIENCE, 2014, 90 : 71 - 81
[32] InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids
Lundskog, A.
Palisaitis, J.
Hsu, C. W.
Eriksson, M.
Karlsson, K. F.
Hultman, L.
Persson, P. O. A.
Forsberg, U.
Holtz, P. O.
Janzen, E.
NANOTECHNOLOGY, 2012, 23 (30)
[33] High-efficiency InGaN blue light-emitting diodes on low-threading- dislocation-density GaN substrates
Epitaxy Technologies R and D Department, Semiconductor Technologies R and D Laboratories
不详
SEI Tech Rev, 2007, 65 (35-40): : 35 - 40
[34] Effects of Interlayers in Threading Dislocation Reduction of Step-graded InGaN Heteroepitaxy
Khatun, Shifa
Sanober, Sveda Arza
Hossain, Md. Arafat
Islam, Md. Rafiqul
2013 INTERNATIONAL CONFERENCE ON ELECTRICAL INFORMATION AND COMMUNICATION TECHNOLOGY (EICT), 2013,
[35] Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
Zhang, Kaitian
Hu, Chenxi
Vangipuram, Vijay Gopal Thirupakuzi
Meng, Lingyu
Chae, Christopher
Zhu, Menglin
Hwang, Jinwoo
Kash, Kathleen
Zhao, Hongping
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2023, 41 (06):
[36] Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
Hartono, H.
Soh, C. B.
Chow, S. Y.
Chua, S. J.
Fitzgerald, E. A.
APPLIED PHYSICS LETTERS, 2007, 90 (17)
[37] Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, Richard
Kirste, Lutz
Passow, Thorsten
Kunzer, Michael
Koehler, Klaus
Wagner, Joachim
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (07): : 1710 - 1712
[38] Simulation of GaN/InGaN avalanche phototransistors
Zhou, Zhongliang
Zhu, Min
Wu, Qi
Di, Shaohui
Wang, Tong
Chen, Jun
8TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES, 2016, 9686
[39] Basal-plane slip in InGaN/GaN heterostructures in the presence of threading dislocations
Mei, J.
Liu, R.
Ponce, F. A.
Omiya, H.
Mukai, T.
APPLIED PHYSICS LETTERS, 2007, 90 (17)
[40] Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose
Henley, SJ
Cherns, D
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3934 - 3939

← 1 2 3 4 5 →