FE simulation of InGaN QD formation at the edge of threading dislocation in GaN

被引：1

作者：

Dluzewski, Pawel ^{[1
]}

Belkadi, Amina ^{[1
]}

Chen, Jun ^{[2
]}

Ruterana, Pierre ^{[3
]}

Nouet, Gerard ^{[3
]}

机构：

[1] Polish Acad Sci, Inst Fundamental Technol Res, Swietokrzyska 21, PL-00049 Warsaw, Poland

[2] LRPMN, Damigny, France

[3] SIFCOM, CNRS, ENSICAEN, UMR 6176, F-14050 Caen, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674870

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The stress induced diffusion process of In-Ga segregation in InxGa1-xN layer deposited on GaN is simulated step by step by using a 3D nonlinear FE method. From the thermodynamical point of view this process is governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses we consider is the set of threading dislocations examined in the plane view HRTEM investigation of GaN layer deposited on sapphire. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2403 / +

页数：2

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