Photoluminescence and electroluminescence of wide-gap amorphous hydrogenated silicon prepared under high dilution with He

被引：0

作者：

Pelant, I

Luterova, K

Knapek, P

Kocka, J

Stuchlik, J

Poruba, A

Surendan, S

Valenta, J

Dian, J

Honerlage, B

机构：

[1] Acad Sci Czech Republ, Inst Phys, CR-16200 Prague 6, Czech Republic

[2] EHICS ULP CNRS, IPCMS, Grp Opt Nonlineaire & Optoelect, Unite Mixte 380064, F-67037 Strasbourg, France

[3] Tech Univ, Fac Chem, Brno 63700, Czech Republic

[4] Charles Univ, Fac Math & Phys, Prague 12116 2, Czech Republic

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1998年 / 165卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199801)165:1<25::AID-PSSA25>3.0.CO;2-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Absorption spectra in the visible and IR regions and photoluminescence (PL) spectra of wide-gap hydrogenated amorphous silicon (a-Si:H) are investigated. The possible origin of the room temperature visible PL is discussed. First electroluminescence results on a p-i-n structure are reported.

引用

页码：25 / 29

页数：5

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[1] Photoluminescence and electroluminescence of wide-gap amorphous hydrogenated silicon prepared under high dilution with He
Acad of Sciences of the Czech, Republic, Praha, Czech Republic
Phys Status Solidi A, 1 (25-29):
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