Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon

被引:0
|
作者
Luterova, K.
Pelant, I.
Fojtik, P.
Nikl, M.
Gregora, I.
Kocka, J.
Dian, J.
Valenta, J.
Maly, P.
Kudrna, J.
Stepanek, J.
Poruba, A.
Horvath, P.
机构
[1] Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53, Praha 6, Czech Republic
[2] Charles University, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Praha 2, Czech Republic
[3] Faculty of Chemistry, Technical University of Brno, Purkyňova 118, 637 00 Brno, Czech Republic
关键词
ACKNOWLEDGEMENTS The authors thank A. Fejfar for many valuable discussions. The financial support by grant A1010809 (Grant Agency of the Academy of Sciences of the Czech Republic) and grant 202/98/0669 (Grant Agency of the Czech Republic) is gratefully acknowledged;
D O I
10.1080/014186300440171
中图分类号
学科分类号
摘要
46
引用
收藏
页码:1811 / 1832
相关论文
共 50 条
  • [1] Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon
    Luterová, K
    Pelant, I
    Fojtík, P
    Nikl, M
    Gregora, I
    Kocka, J
    Dian, J
    Valenta, J
    Maly, P
    Kudrna, J
    Stepánek, J
    Poruba, A
    Horváth, P
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2000, 80 (10): : 1811 - 1832
  • [2] Visible electroluminescence in hydrogenated amorphous silicon oxynitride
    Kato, H
    Masuzawa, A
    Sato, H
    Noma, T
    Seol, KS
    Fujimaki, M
    Ohki, Y
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2216 - 2220
  • [3] Photoluminescence and electroluminescence of wide-gap amorphous hydrogenated silicon prepared under high dilution with He
    Pelant, I
    Luterova, K
    Knapek, P
    Kocka, J
    Stuchlik, J
    Poruba, A
    Surendan, S
    Valenta, J
    Dian, J
    Honerlage, B
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 165 (01): : 25 - 29
  • [4] Photoluminescence and electroluminescence of wide-gap amorphous hydrogenated silicon prepared under high dilution with He
    Acad of Sciences of the Czech, Republic, Praha, Czech Republic
    Phys Status Solidi A, 1 (25-29):
  • [5] APPLICATION OF WIDE-BANDGAP HYDROGENATED AMORPHOUS SILICON OXIDE LAYERS TO HETEROJUNCTION SOLAR CELLS FOR HIGH QUALITY PASSIVATION
    Mueller, Thomas
    Schwertheim, Stefan
    Fahmer, Wolfgang R.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 1785 - 1790
  • [6] Blue photoluminescence of wide-bandgap polystyrenesulfonate materials
    Zhang, Wenqian
    Wan, Lu
    Yang, Dehua
    Guo, Jianxin
    Zhou, Xin
    Yuan, Xiaoyang
    Chang, Xuan
    Zhang, Cuili
    Chen, Jianhui
    CHEMICAL COMMUNICATIONS, 2024, 60 (90) : 13187 - 13190
  • [7] PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON
    PANKOVE, JI
    CARLSON, DE
    APPLIED PHYSICS LETTERS, 1977, 31 (07) : 450 - 451
  • [8] Hydrogenated amorphous silicon deposited by glow discharge of SiH4 diluted with He:: photoluminescence and electroluminescence in the visible region
    Luterova, K
    Knapek, P
    Stuchlik, J
    Kocka, J
    Poruba, A
    Kudrna, J
    Maly, P
    Valenta, J
    Dian, J
    Honerlage, B
    Pelant, I
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 254 - 258
  • [9] Wide gap hydrogenated amorphous silicon for visible light emission
    Luterová, K.
    Poruba, A.
    Dian, J.
    Salyk, O.
    Horváth, P.
    Knápek, P.
    Valenta, J.
    Kocka, J.
    Pelant, I.
    Journal of Porous Materials, 2000, 7 (01) : 135 - 138
  • [10] Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission
    K. Luterová
    A. Poruba
    J. Dian
    O. Salyk
    P. Horváth
    P. Knápek
    J. Valenta
    J. Kočka
    I. Pelant
    Journal of Porous Materials, 2000, 7 : 135 - 138