Photoluminescence and electroluminescence of wide-gap amorphous hydrogenated silicon prepared under high dilution with He

被引：0
|
作者：
Pelant, I
Luterova, K
Knapek, P
Kocka, J
Stuchlik, J
Poruba, A
Surendan, S
Valenta, J
Dian, J
Honerlage, B
机构：
[1] Acad Sci Czech Republ, Inst Phys, CR-16200 Prague 6, Czech Republic
[2] EHICS ULP CNRS, IPCMS, Grp Opt Nonlineaire & Optoelect, Unite Mixte 380064, F-67037 Strasbourg, France
[3] Tech Univ, Fac Chem, Brno 63700, Czech Republic
[4] Charles Univ, Fac Math & Phys, Prague 12116 2, Czech Republic
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1998年 / 165卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199801)165:1<25::AID-PSSA25>3.0.CO;2-C
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Absorption spectra in the visible and IR regions and photoluminescence (PL) spectra of wide-gap hydrogenated amorphous silicon (a-Si:H) are investigated. The possible origin of the room temperature visible PL is discussed. First electroluminescence results on a p-i-n structure are reported.
引用
收藏
页码：25 / 29
页数：5
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