High-Temperature Stability Performance of 4H-SiC Schottky Diodes

被引：0

作者：

Maset, E. ^{[1
]}

Sanchis-Kilders, E. ^{[1
]}

Jordan, J. ^{[1
]}

Ejea, J. Bta ^{[1
]}

Ferreres, A. ^{[1
]}

Esteve, V. ^{[1
]}

Millan, J. ^{[2
]}

Godignon, P. ^{[2
]}

机构：

[1] Univ Valencia, LEII Elect Engn Dept, E-46100 Valencia, Spain

[2] MICELECT NATL CTR, LEII Elect Engn Dept, E-46100 Valencia, Spain

来源：

EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年

关键词：

SiC-device; Thermal stress; Discrete power device; Reliability; Aerospace;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270 degrees C during 600 hours has demonstrated the capability to operate up to 300 degrees C. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.

引用

页码：1887 / +

页数：2

共 50 条

[41] Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes
Izzo, G.
Litrico, G.
Calcagno, L.
Foti, G.
La Via, F.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
[42] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
Ivanov, P. A.
Grekhov, I. V.
Potapov, A. S.
Samsonova, T. P.
Il'inskaya, N. D.
Kon'kov, O. I.
Serebrennikova, O. Yu.
SEMICONDUCTORS, 2010, 44 (05) : 653 - 656
[43] High temperature applications of 4H-SiC vertical junction field-effect transistors and Schottky diodes
Bhatnagar, P.
Wright, N. G.
Horsfall, A. B.
Johnson, C. M.
Uren, M. J.
Hilton, K. P.
Munday, A. G.
Hydes, A. J.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 987 - +
[44] Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range
A. A. Lebedev
V. V. Kozlovski
M. E. Levinshtein
D. A. Malevsky
R. A. Kuzmin
Semiconductors, 2023, 57 : 239 - 243
[45] Design of dual use, high efficiency, 4H-SiC Schottky and MPS diodes
Severt, C
Agarwal, A
Singh, R
Ryu, SH
Palmour, JW
35TH INTERSOCIETY ENERGY CONVERSION ENGINEERING CONFERENCE & EXHIBIT (IECEC), VOLS 1 AND 2, TECHNICAL PAPERS, 2000, : 180 - 184
[46] Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes
Okino, Hiroyuki
Kameshiro, Norifumi
Konishi, Kumiko
Shima, Akio
Yamada, Ren-ichi
JOURNAL OF APPLIED PHYSICS, 2017, 122 (23)
[47] Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields
Singh, R
Palmour, JW
ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 157 - 160
[48] Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
Ivanov, P. A.
Grekhov, I. V.
Potapov, A. S.
Il'inskaya, N. D.
Kon'kov, O. I.
Samsonova, T. P.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 877 - 880
[49] Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes
Izzo, G.
Litrico, G.
Calcagno, L.
Foti, G.
La Via, F.
Journal of Applied Physics, 2008, 104 (09):
[50] High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
郑柳
张峰
刘胜北
董林
刘兴昉
樊中朝
刘斌
闫果果
王雷
赵万顺
孙国胜
何志
杨富华
ChinesePhysicsB, 2013, 22 (09) : 572 - 577

← 1 2 3 4 5 →