High-Temperature Stability Performance of 4H-SiC Schottky Diodes

被引：0

作者：

Maset, E. ^{[1
]}

Sanchis-Kilders, E. ^{[1
]}

Jordan, J. ^{[1
]}

Ejea, J. Bta ^{[1
]}

Ferreres, A. ^{[1
]}

Esteve, V. ^{[1
]}

Millan, J. ^{[2
]}

Godignon, P. ^{[2
]}

机构：

[1] Univ Valencia, LEII Elect Engn Dept, E-46100 Valencia, Spain

[2] MICELECT NATL CTR, LEII Elect Engn Dept, E-46100 Valencia, Spain

来源：

EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年

关键词：

SiC-device; Thermal stress; Discrete power device; Reliability; Aerospace;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270 degrees C during 600 hours has demonstrated the capability to operate up to 300 degrees C. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.

引用

页码：1887 / +

页数：2

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