A ReRAM Memory Compiler with Layout-Precise Performance Evaluation

被引:1
|
作者
Lee, Edward [1 ]
Kim, Daehyun [1 ]
Chekuri, Venkata Chaitanya Krishna [1 ]
Long, Yun [1 ]
Mukhopadhyay, Saibal [1 ]
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
关键词
ReRAM; DSE; Memory Compiler; EDA;
D O I
10.1109/S3S46989.2019.9320750
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents, for the first time, a design automation methodology to generate 1T-1R based Resistive Random Access Memory (ReRAM) arrays with layout-precise performance evaluation. A ReRAM memory compiler is developed and demonstrated on this basis with the ability to account for the unique peripheral circuits devoted to improving performance of ReRAM devices. Given target specifications (e.g. memory capacity, operating frequency), the compiler generates ReRAM sub-arrays and constructs area/power-optimized arrays with performance/power models for evaluation and design space exploration (DSE). The tool is demonstrated with ReRAM device models and 65nm CMOS technology.
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页数:3
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