The impact of gate-to-source tunneling current on the characterization of metal-oxide-semiconductor field-effect transistor's hot-carrier reliability

Drain current (I-d) degradation due to Fowler-Nordheim (FN) stress and V-g = V-d stress were investigated in 0.15mum n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under V-g = V-d stress, the damage resulting from gate-to-source tunneling current is not negligible in comparison with the damage caused by channel hot carriers. Id degradation models of pMOSFETs under FN stress and V-g = V-d stress were established. According to the I-d degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.