Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels

被引：20
|
作者：
Tabuchi, M
Fujibayashi, K
Yamada, N
Hagiwara, K
Kobashi, A
Iguchi, T
Takeda, Y
Kamei, H
机构：
[1] Nagoya Univ, Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan
[2] Sumitomo Elect Ind Ltd, Optoelect Res & Dev Labs, Sakae Ku, Yokohama, Kanagawa 244, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 186卷 / 1-2期
关键词：
X-ray CTR; heterointerface; InGaAs/InP; photoluminescence; calculation of energy level;
D O I：
10.1016/S0022-0248(97)00476-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The distributions of As and Ga atoms in an InP/InGaAs/InP hetero-epitaxial layer were investigated on an atomic scale by X-ray CTR (crystal truncation rod) scattering. The relationship between PH3-purge time (after the InGaAs layer was constructed) and the distributions of As and Ga atoms was studied, In samples which were designed to have a 1 hll-thick InGaAs layer, Ga atoms were not confined to 1 hit (monolayer). The energy levels of the InGaAs well layers were calculated using the measured As and Ga distributions. In order to compare them with the calculated result, a photoluminescence (PL) measurement was conducted and the measured energy levels agreed well with the calculation. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：48 / 54
页数：7
相关论文
共 50 条
  • [41] The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength
    Gusakov, Y
    Finkman, E
    Bahir, G
    Ritter, D
    APPLIED PHYSICS LETTERS, 2001, 79 (16) : 2508 - 2510
  • [42] InGaAs/InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis
    Piva, PG
    Mitchell, IV
    Chen, H
    Feenstra, RM
    Aers, GC
    Poole, PJ
    Charbonneau, S
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
  • [43] INGAAS/INP HOLE INTERSUBBAND NORMAL INCIDENCE QUANTUM-WELL INFRARED PHOTODETECTOR
    GUNAPALA, SD
    LEVINE, BF
    RITTER, D
    HAMM, R
    PANISH, MB
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) : 2458 - 2460
  • [44] INTERMIXING OF INGAAS/INP MULTIPLE QUANTUM WELL STRUCTURES BY GA IMPLANTATION
    SUMIDA, H
    ASAHI, H
    YU, SJ
    ASAMI, K
    GONDA, S
    TANOUE, H
    APPLIED PHYSICS LETTERS, 1989, 54 (06) : 520 - 522
  • [45] Determination of the chemical composition profile in As+ implanted InGaAs/InP superlattice crystal by means of X-ray diffraction
    Gaca, J.
    Wojcik, M.
    Turos, A.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2000, 56 : S401 - S401
  • [46] SCANNING TUNNELING OPTICAL SPECTROSCOPY OF INASP/INP QUANTUM-WELL STRUCTURES
    QIAN, LQ
    WESSELS, BW
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 569 - 572
  • [47] LOW-LOSS INGAAS INP MULTIPLE QUANTUM-WELL WAVE-GUIDES
    KOREN, U
    MILLER, BI
    KOCH, TL
    BOYD, GD
    CAPIK, RJ
    SOCCOLICH, CE
    APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1602 - 1604
  • [48] Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array
    Bezinger, A.
    Liu, H. C.
    Aslan, B.
    Buchanan, M.
    Springthorpe, A. J.
    Poole, P. J.
    Cardimona, D. A.
    Brown, G. J.
    ELECTRONICS LETTERS, 2007, 43 (12) : 685 - 686
  • [49] Analysis of three types of interdiffusion process in InGaAs/InP quantum-well and their devices implications
    Chan, MCY
    Chan, KS
    Li, EH
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 389 - 394
  • [50] Time-frequency spectroscopy of an InGaAs/InP quantum-well exciton Bragg reflector
    Ogawa, K
    Matsui, Y
    APPLIED PHYSICS LETTERS, 1999, 74 (18) : 2569 - 2571
12345