Determination of the chemical composition profile in As+ implanted InGaAs/InP superlattice crystal by means of X-ray diffraction

被引：0
|
作者：
Gaca, J. [1 ]
Wojcik, M. [1 ]
Turos, A. [1 ]
机构：
[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2000年 / 56卷
关键词：
surface crystallography structure;
D O I：
10.1107/S0108767300028324
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
o.m8.p5
引用
收藏
页码：S401 / S401
页数：1
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