Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors

被引：0
|
作者：
Lin, Wei-Hsun [1 ]
Tseng, Chi-Che [2 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Lin, Shih-Yen [3 ,4 ,5 ]
Wu, Meng-Chyi [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[5] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 20224, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 04期
关键词：
Quantum-dot infrared photodetectors (QDIPs); TEMPERATURE OPERATION;
D O I：
10.1109/LPT.2009.2037727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum-dot infrared photodetectors (QDIPs) with InGaAs capping layers are investigated. Compared with the standard QDIP with 2.5-mono-layer (ML) InAs QDs, the detection wavelength is shifted from 6 to 7.9 m for an 8-nm InGaAs-capped QDIP. By decreasing the QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 m is observed, which is attributed to the higher energy levels of the QD excited states resulted from the smaller QDs. By further increasing the capping layer thickness to 12 nm, longer detection wavelengths with broad response 10-18 m is observed for the InGaAs-capped QDIP.
引用
收藏
页码：227 / 229
页数：3
相关论文
共 50 条
  • [31] InAs/InGaAs/InP structures for quantum dot infrared photodetectors
    Landi, SM
    Pires, MP
    Tribuzy, CVB
    Souza, PL
    Marega, E
    Silva, AG
    Guimaraes, PSS
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8, 2005, 2 (08): : 3171 - 3174
  • [32] Ultra-compact wavelength-tunable quantum-dot laser with silicon-photonics double ring filter
    Graduate School of Engineering, Tohoku University, Sendai
    980-8579, Japan
    不详
    184-8795, Japan
    Appl. Phys. Express, 6
  • [33] Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
    Ye, ZM
    Campbell, JC
    Chen, ZH
    Kim, ET
    Madhukar, A
    APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1234 - 1236
  • [34] Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser
    Wu Yan-Hua
    Wu Jian
    Jin Peng
    Wang Fei-Fei
    Hu Fa-Jie
    Wei Heng
    Wang Zhan-Guo
    CHINESE PHYSICS B, 2015, 24 (06)
  • [35] Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
    Lin, SY
    Tsai, YJ
    Lee, SC
    APPLIED PHYSICS LETTERS, 2003, 83 (04) : 752 - 754
  • [36] TlGaN Quantum-Dot Photodetectors
    A. G. Al-Shatravi
    H. Hassan
    S. M. Abdulalmuhsin
    A. H. Al-Khursan
    Semiconductors, 2021, 55 : 359 - 362
  • [37] Multispectral quantum-dot photodetectors
    David J. Norris
    Nature Photonics, 2019, 13 : 230 - 232
  • [38] TlGaN Quantum-Dot Photodetectors
    Al-Shatravi, A. G.
    Hassan, H.
    Abdulalmuhsin, S. M.
    Al-Khursan, A. H.
    SEMICONDUCTORS, 2021, 55 (03) : 359 - 362
  • [39] Ultra-compact wavelength-tunable quantum-dot laser with silicon-photonics double ring filter
    Kita, Tomohiro
    Yamamoto, Naokatsu
    Kawanishi, Tetsuya
    Yamada, Hirohito
    APPLIED PHYSICS EXPRESS, 2015, 8 (06)
  • [40] Combining fast electrical control and resonant excitation to create a wavelength-tunable and coherent quantum-dot light source
    Bennett, A. J.
    Cao, Y.
    Ellis, D. J. P.
    Farrer, I.
    Ritchie, D. A.
    Shields, A. J.
    QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS CHARACTERIZATION AND MODELING XII, 2015, 9373
12345