Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors

被引：0
|
作者：
Lin, Wei-Hsun [1 ]
Tseng, Chi-Che [2 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Lin, Shih-Yen [3 ,4 ,5 ]
Wu, Meng-Chyi [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[5] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 20224, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 04期
关键词：
Quantum-dot infrared photodetectors (QDIPs); TEMPERATURE OPERATION;
D O I：
10.1109/LPT.2009.2037727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum-dot infrared photodetectors (QDIPs) with InGaAs capping layers are investigated. Compared with the standard QDIP with 2.5-mono-layer (ML) InAs QDs, the detection wavelength is shifted from 6 to 7.9 m for an 8-nm InGaAs-capped QDIP. By decreasing the QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 m is observed, which is attributed to the higher energy levels of the QD excited states resulted from the smaller QDs. By further increasing the capping layer thickness to 12 nm, longer detection wavelengths with broad response 10-18 m is observed for the InGaAs-capped QDIP.
引用
收藏
页码：227 / 229
页数：3
相关论文
共 50 条
  • [21] Quantum-dot infrared photodetectors: Status and outlook
    Martyniuk, P.
    Rogalski, A.
    PROGRESS IN QUANTUM ELECTRONICS, 2008, 32 (3-4) : 89 - 120
  • [22] Vertically Coupled Quantum-Dot Infrared Photodetectors
    Lo, Ming-Cheng
    Wang, Shiang-Yu
    Ling, Hong-Shi
    Lee, Chien-Ping
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (11) : 796 - 798
  • [23] INFRARED IMAGING Multispectral quantum-dot photodetectors
    Norris, David J.
    NATURE PHOTONICS, 2019, 13 (04) : 230 - 232
  • [24] Negative differential photoconductivity in quantum-dot infrared photodetectors
    Ryzhii, V
    APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3346 - 3348
  • [25] SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping
    Lin, Chu-Hsuan
    Yu, Cheng-Ya
    Chang, Chieh-Chun
    Lee, Cheng-Han
    Yang, Ying-Jhe
    Ho, Wei Shuo
    Chen, Yen-Yu
    Liao, Ming Han
    Cho, Chia-Ting
    Peng, Cheng-Yi
    Liu, Chee Wee
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (05) : 558 - 564
  • [26] Polarization dependence of photocurrent in quantum-dot infrared photodetectors
    Gebhard, T.
    Souza, P. L.
    Schrey, F. F.
    Strasser, G.
    Unterrainer, K.
    Pires, M. P.
    Landi, S. M.
    Villas-Boas, J. M.
    Studart, N.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 443 - +
  • [27] Quantum-dot infrared photodetectors and focal plane arrays
    Razeghi, Manijeh
    Lim, Ho-Chul
    Tsao, Stanley
    Taguchi, Maho
    Zhang, Wei
    Quivy, Alain Andre
    INFRARED TECHNOLOGY AND APPLICATIONS XXXII, PTS 1AND 2, 2006, 6206
  • [28] Gain and recombination dynamics of quantum-dot infrared photodetectors
    Lim, H.
    Movaghar, B.
    Tsao, S.
    Taguchi, M.
    Zhang, W.
    Quivy, A. A.
    Razeghi, M.
    PHYSICAL REVIEW B, 2006, 74 (20)
  • [29] Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
    Ling, Hong-Shi
    Wang, Shiang-Yu
    Lee, Chien-Ping
    Lo, Ming-Cheng
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (1-4) : 118 - 120
  • [30] Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
    McKerracher, Ian
    Wong-Leung, Jenny
    Jolley, Greg
    Fu, Lan
    Tan, Hoe H.
    Jagadish, Chennupati
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (05) : 577 - 590
12345