共 50 条
- [43] Dry etching of Ge2Sb2Te5 thin films into nanosized patterns using TiN hard mask JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (37-41): : L1080 - L1083
- [44] Dry etching of Ge2Sb2Te5 thin films into nanosized patterns using TiN hard mask Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (37-41):
- [46] Reduction of plasma process-induced damage during gate poly etching by using a SiO2 hard mask 1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1998, : 72 - 75
- [47] Formation of electron multiplier by utilizing the MEMS bulk-silicon-micro-machining technology - art. no. 662109 INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2007: PHOTOELECTRONIC IMAGING AND DETECTION, 2008, 6621 : 62109 - 62109
- [49] Development of equipment-installed APC system and critical dimension control technology of gate-hard-mask etching using its system ISSM 2005: IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS, 2005, : 139 - 142