Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers

被引：1

作者：

Zhuravleva, OV ^{[1
]}

Kurnosov, VD ^{[1
]}

Shveikin, VI ^{[1
]}

机构：

[1] Polyus Sci Res Inst State Enterprise, Moscow 117342, Russia

来源：

QUANTUM ELECTRONICS | 1997年 / 27卷 / 09期

关键词：

D O I：

10.1070/QE1997v027n09ABEH001038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation was made of the radiation strength of GaAlAs-GaAs and InGaAsP-InP semiconductor lasers. This strength fell with increase in the laser emission wavelength. The highest radiation strength was observed for semiconductor lasers emitting at the wavelength of 0.85 mu m.

引用

页码：753 / 755

页数：3

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