Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers

被引：1
|
作者：
Zhuravleva, OV [1 ]
Kurnosov, VD [1 ]
Shveikin, VI [1 ]
机构：
[1] Polyus Sci Res Inst State Enterprise, Moscow 117342, Russia
来源：
QUANTUM ELECTRONICS | 1997年 / 27卷 / 09期
关键词：
D O I：
10.1070/QE1997v027n09ABEH001038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation was made of the radiation strength of GaAlAs-GaAs and InGaAsP-InP semiconductor lasers. This strength fell with increase in the laser emission wavelength. The highest radiation strength was observed for semiconductor lasers emitting at the wavelength of 0.85 mu m.
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页码：753 / 755
页数：3
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