High quality ultrathin CoTiO3 high-k gate dielectrics

被引：0
|
作者：
Pan, TM [1 ]
Lei, TF
Chao, TS
Chang, KL
Hsieh, KC
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Nano Device Labs, Hsinchu, Taiwan
[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3/Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2000 The Electrochemical Society. S1099-0062(00)03-095-9. All rights reserved.
引用
收藏
页码：433 / 434
页数：2
相关论文
共 50 条
  • [41] Noise in Si and SiGe MOSFETs with high-k gate dielectrics
    von Haartman, M
    Malm, BG
    Hellström, PE
    Östling, M
    NOISE AND FLUCTUATIONS, 2005, 780 : 225 - 230
  • [42] High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
    Wang, Binghao
    Huang, Wei
    Chi, Lifeng
    Al-Hashimi, Mohammed
    Marks, Tobin J.
    Facchetti, Antonio
    CHEMICAL REVIEWS, 2018, 118 (11) : 5690 - 5754
  • [43] High-mobility dual metal gate MOS transistors with high-k gate dielectrics
    Takahashi, K. (k-takahashi@ha.jp.nec.com), 1600, Japan Society of Applied Physics (44):
  • [44] Transient charging and relaxation in high-k gate dielectrics and their implications
    Lee, Byoung Hun
    Young, Chadwin
    Choi, Rino
    Sim, Jang Hwan
    Bersuker, Gennadi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (4 B): : 2415 - 2419
  • [45] High-mobility dual metal gate MOS transistors with high-k gate dielectrics
    Takahashi, K
    Manabe, K
    Morioka, A
    Ikarashi, T
    Yoshihara, T
    Watanabe, H
    Tatsumi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2210 - 2213
  • [46] Analysis of ultra short MOSFETs with high-k gate dielectrics
    Dragosits, K
    Ponomarev, Y
    Dachs, C
    Selberherr, S
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 412 - 415
  • [47] Limiting native oxide regrowth for high-k gate dielectrics
    Choi, K
    Harris, H
    Gangopadhyay, S
    Temkin, H
    COMOS FRONT-END MATERIALS AND PROCESS TECHNOLOGY, 2003, 765 : 85 - 90
  • [48] Quantum mechanical modeling of MOSFET gate leakage for high-k gate dielectrics
    Wu, Huixian
    Zhao, Yijie Sandy
    White, Marvin H.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 1164 - 1169
  • [49] Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics
    Ohara, Kosuke
    Uraoka, Yukiharu
    Fuyuki, Takashi
    Yamashita, Ichiro
    Yaegashi, Toshitake
    Moniwa, Masahiro
    Yoshimaru, Masaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [50] TDDB and BTI reliabilities of high-k stacked gate dielectrics - Impact of initial traps in high-k layer
    Okada, Kenji
    Ota, Hiroyuki
    Nabatame, Toshihide
    Toriumi, Akira
    2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, : 87 - +
12345