High quality ultrathin CoTiO3 high-k gate dielectrics

被引：0
|
作者：
Pan, TM [1 ]
Lei, TF
Chao, TS
Chang, KL
Hsieh, KC
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Nano Device Labs, Hsinchu, Taiwan
[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 09期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3/Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2000 The Electrochemical Society. S1099-0062(00)03-095-9. All rights reserved.
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页码：433 / 434
页数：2
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