Ballistic-electron-emission microscopy (BEEM) studies of GaInP/GaAs heterostructures

被引:0
|
作者
OShea, JJ [1 ]
Reaves, CM [1 ]
Chin, MA [1 ]
Denbaars, SP [1 ]
Gossard, AC [1 ]
Narayanamurti, V [1 ]
Jones, ED [1 ]
机构
[1] UNIV CALIF SANTA BARBARA, DEPT MAT, SANTA BARBARA, CA 93106 USA
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:79 / 83
页数:5
相关论文
共 50 条
  • [31] CHARACTERIZATION OF THE METAL-SEMICONDUCTOR INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    CORATGER, R
    AJUSTRON, F
    BEAUVILLAIN, J
    MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1994, 5 (01): : 31 - 40
  • [32] Observation of misfit dislocations at the InxGa1-xAs/GaAs interface by ballistic-electron-emission microscopy
    Lee, EY
    Bhargava, S
    Chin, MA
    Narayanamura, V
    Pond, KJ
    Luo, K
    APPLIED PHYSICS LETTERS, 1996, 69 (07) : 940 - 942
  • [33] BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF GAP(110)-METAL INTERFACES
    PRIETSCH, M
    LUDEKE, R
    PHYSICAL REVIEW LETTERS, 1991, 66 (19) : 2511 - 2514
  • [34] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    BELL, LD
    KAISER, WJ
    PHYSICAL REVIEW LETTERS, 1988, 61 (20) : 2368 - 2371
  • [35] BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS
    BELL, LD
    MILLIKEN, AM
    MANION, SJ
    KAISER, WJ
    FATHAUER, RW
    PIKE, WT
    PHYSICAL REVIEW B, 1994, 50 (11): : 8082 - 8085
  • [36] Metal/GaN Schottky barriers characterized by ballistic-electron-emission microscopy and spectroscopy
    Bell, LD
    Smith, RP
    McDermott, BT
    Gertner, ER
    Pittman, R
    Pierson, RL
    Sullivan, GJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2286 - 2290
  • [37] BALLISTIC-ELECTRON-EMISSION MICROSCOPY INVESTIGATION OF SCHOTTKY-BARRIER INTERFACE FORMATION
    HECHT, MH
    BELL, LD
    KAISER, WJ
    GRUNTHANER, FJ
    APPLIED PHYSICS LETTERS, 1989, 55 (08) : 780 - 782
  • [38] REDUCED ELECTRON TRANSMISSION IN AU/GAAS DIODES DAMAGED BY FOCUSED ION-BEAM IMPLANTATION STUDIED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    MCNABB, JW
    SKVARLA, M
    CRAIGHEAD, HG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3712 - 3715
  • [39] BALLISTIC-ELECTRON-EMISSION MICROSCOPY CHARACTERISTICS OF REVERSE-BIASED SCHOTTKY DIODES
    DAVIES, A
    CRAIGHEAD, HG
    APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2833 - 2835
  • [40] Au/n-ZnSe contacts studied with use of ballistic-electron-emission microscopy
    Coratger, R.
    Ajustron, F.
    Beauvillain, J.
    Dharmadasa, I. M.
    P C Magazine: The Independent Guide to IBM - Standard Personal Computers, 1994, 13 (21):