We have grown Yb-doped ZnO (ZnO:Yb) on c-plane sapphire substrates by sputtering-assisted metal-organic chemical vapor deposition (SA-MOCVD). X-ray diffraction (XRD) revealed that these ZnO:Yb films exhibit a c-axis orientation and that the lattice constant increases with Yb concentration. After annealing the samples at 600 degrees C for 0.5 h in O2, they showed a clear 980 nm emission due to the intra-4f shell transitions of F-2(5/2) -F-2(7/2) in Yb3+ ions. It turns out that Yb lu-minescent centers with different local structures coexist, which exhibit different energy transfer processes from the ZnO host. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Division of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ., Yamadaoka, SuitaDivision of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ., Yamadaoka, Suita
Terai Y.
Yoshida K.
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Division of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ., Yamadaoka, SuitaDivision of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ., Yamadaoka, Suita
Yoshida K.
Fujiwara Y.
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Division of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ., Yamadaoka, SuitaDivision of Materials and Manufacturing Sci., Graduate School of Eng., Osaka Univ., Yamadaoka, Suita