Comment on "Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb" [Appl. Phys. Lett. 75, 2954, (1999)]

被引：1

|

作者：

Evans, PG ^{[1
]}

Dubon, OD ^{[1
]}

Chervinsky, JF ^{[1
]}

Spaepen, F ^{[1
]}

Golovchenko, JA ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1318930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2616 / 2616

页数：1

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