Comment on "Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb" [Appl. Phys. Lett. 75, 2954, (1999)]

被引：1

作者：

Evans, PG ^{[1
]}

Dubon, OD ^{[1
]}

Chervinsky, JF ^{[1
]}

Spaepen, F ^{[1
]}

Golovchenko, JA ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1318930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2616 / 2616

页数：1

共 33 条

[21] Comment on 'effect of electron temperature on negative hydrogen ion production in a low-pressure Ar discharge plasma with methane' [Appl. Phys. Lett. 63, 1619 (1993)]
Pinnaduwage, Lal A.
Applied Physics Letters, 1995, 67 (07):
[22] Comment on "High efficient biexciton photoluminescence observed from single ZnCdSe quantum wells with continuous wave cold carrier generation" [Appl. Phys. Lett. 74, 1138 (1999)]
Langbein, W
APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2150 - 2150
[23] Comment on "Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer" [Appl. Phys. Lett. 88, 032103 (2006)]
Ho, C. Y.
APPLIED PHYSICS LETTERS, 2006, 89 (01)
[24] Comment on "Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction at low temperature" [Appl. Phys. Lett. 94, 013503 (2009)]
Lin, Yow-Jon
APPLIED PHYSICS LETTERS, 2009, 94 (16)
[25] Response to 'comment on 'effect of electron temperature on negative-hydrogen ion production in a low-pressure Ar discharge plasma with methane' [Appl. Phys. Lett. 67, 1034 (1995)]
Iizuka, S.
Sato, N.
Applied Physics Letters, 1995, 67 (07):
[26] Response to "Comment on 'Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction at low temperature' " [Appl. Phys. Lett. 94, 166102 (2009)]
Zhou, Hai
Fang, Guojia
Yuan, Longyan
Wang, Chong
Yang, Xiaoxia
Huang, Huihui
Zhou, Conghua
Zhao, Xingzhong
APPLIED PHYSICS LETTERS, 2009, 94 (16)
[27] Comment on "High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films" [Appl. Phys. Lett. 78, 973 (2001)]
Zurbuchen, MA
Schlom, DG
Streiffer, SK
APPLIED PHYSICS LETTERS, 2001, 79 (06) : 887 - 888
[28] Comment on "Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate" [Appl. Phys. Lett. 90, 083507 (2007)]
Zhou, Zhiwen
Li, Cheng
Chen, Songyan
Lai, Hongkai
Yu, Jinzhong
APPLIED PHYSICS LETTERS, 2008, 93 (15)
[29] Comment on "Reversible phase transition between amorphous and crystalline in Zr41.2Ti13.8Cu12.5Ni10Be22.5 under high pressure at room temperature" [Appl. Phys. Lett. 76, 2874 (2000)]
Jiang, JZ
Gerward, L
Olsen, JS
APPLIED PHYSICS LETTERS, 2002, 80 (16) : 3015 - 3016
[30] Response to "Comment on 'Reversible phase transition between amorphous and crystalline in Zr41.2Ti13.8Cu12.5Ni10Be22.5 under high pressure at room temperature' " [Appl. Phys. Lett. 80, 3015 (2002)]
Sun, LL
Wang, WK
He, DW
Wang, WH
Wu, Q
Zhang, XY
Bao, ZX
Zhang, J
Zhao, Q
Li, YC
Liu, J
APPLIED PHYSICS LETTERS, 2002, 80 (16) : 3017 - 3017

← 1 2 3 4 →