Comment on "Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb" [Appl. Phys. Lett. 75, 2954, (1999)]

被引：1

作者：

Evans, PG ^{[1
]}

Dubon, OD ^{[1
]}

Chervinsky, JF ^{[1
]}

Spaepen, F ^{[1
]}

Golovchenko, JA ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1318930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2616 / 2616

页数：1

共 33 条

[1] Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb
Wei, LC
Su, CS
APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2954 - 2956
[2] Response to `Comment on `Contact resistance of carbon nanotubes'' [Appl. Phys. Lett. 75, 4028 (1999)]
Tersoff, J.
Applied Physics Letters, 1999, 75 (25):
[3] Response to "Comment on 'Contact resistance of carbon nanotubes' " [Appl. Phys. Lett. 75, 4028 (1999)]
Tersoff, J
APPLIED PHYSICS LETTERS, 1999, 75 (25) : 4030 - 4030
[4] LOW-TEMPERATURE HOMOEPITAXIAL GROWTH ON SI(111) MEDIATED BY THIN OVERLAYERS OF AU
WILK, GD
MARTINEZ, RE
CHERVINSKY, JF
SPAEPEN, F
GOLOVCHENKO, JA
APPLIED PHYSICS LETTERS, 1994, 65 (07) : 866 - 868
[5] Response to "Comment on 'Lateral photocurrent spreading in single quantum well infrared photodetectors" ' [Appl. Phys. Lett. 75, 876 (1999)]
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APPLIED PHYSICS LETTERS, 1999, 75 (06) : 877 - 878
[6] Comment on "Emission of prompt electrons during excimer laser ablation of aluminum targets" [Appl. Phys. Lett. 75, 7 (1999)]
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Lu, YF
APPLIED PHYSICS LETTERS, 2000, 76 (02) : 248 - 248
[7] Response to "Comment on 'Raman scattering from a self-organized Ge dot superlattice' " [Appl. Phys. Lett. 75, 3572 (1999)]
Liu, JL
Tang, YS
Wang, KL
APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3574 - 3575
[8] Effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow
Wilk, GD
Chervinsky, JF
Spaepen, F
Golovchenko, JA
APPLIED PHYSICS LETTERS, 1997, 70 (19) : 2553 - 2555
[9] Comment on "Organic electroluminescent devices by high-temperature processing and crystalline hole transporting layer" [Appl. Phys. Lett. 74, 3269 (1999)]
Qin, DS
Yan, DH
Wang, LX
APPLIED PHYSICS LETTERS, 2000, 77 (19) : 3113 - 3114
[10] Comment to "Ferromagnetism at room temperature in La0.8Ca0.2MnO3 thin films" [Appl. Phys. Lett. 74, 1886 (1999)]
Joy, PA
Date, SK
APPLIED PHYSICS LETTERS, 2000, 76 (09) : 1209 - 1209

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