Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy

被引：4

作者：

Kim, Si-Young ^{[1
]}

Lee, Hyun-Jae ^{[2
]}

Park, Seung-Hwan ^{[3
]}

Lee, Woong ^{[3
]}

Jung, Mi-Na ^{[1
]}

Fujii, Katsushi ^{[2
]}

Goto, Takenari ^{[2
]}

Sekiguchi, Takashi ^{[3
]}

Chang, Jiho ^{[1
]}

Kil, Gyungsuk ^{[4
]}

Yao, Takafumi ^{[2
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond, Pusan, South Korea

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 980, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki, Japan

[4] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 14期

关键词：

Freestanding GaN; Polarity; Chloride vapor phase epitaxy; Zinc compounds; Gallium compounds; POLARITY;

D O I：

10.1016/j.jcrysgro.2010.04.032

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new hydride vapor phase epitaxy (HVPE)-based approach for the fabrication of freestanding GaN (FS-GaN) substrates was investigated. For the direct formation of low-temperature GaN (LT-GaN) layers, the growth parameters were optimized: the polarity of ZnO, the growth temperature, and the V/III ratio. The FS-GaN layer was achieved by gas etching in an HVPE reactor. A fingerprint of Zn out-diffusion was detected in the photoluminescence measurements, especially for the thin (80 mu m) FS-GaN film; however, a thicker film (400 mu m) was effectively reduced by optimization of GaN growth. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2150 / 2153

页数：4

共 50 条

[31] Preparation of freestanding GaN wafers by hydride vapor phase epitaxy with void-assisted separation
Oshima, Y. (yuichi@arc.hitachi-cable.co.jp), 1600, Japan Society of Applied Physics (42):
[32] Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy
Lipski, F.
Klein, M.
Yao, X.
Scholz, F.
JOURNAL OF CRYSTAL GROWTH, 2012, 352 (01) : 235 - 238
[33] Self-separation of freestanding GaN from sapphire substrates by hydride vapor phase epitaxy
Tomita, K.
Kachi, T.
Nagai, S.
Kojima, A.
Yamasaki, S.
Koike, M.
Physica Status Solidi (A) Applied Research, 2002, 194 (2 SPEC.): : 563 - 567
[34] Growth of thick AlN layer by hydride vapor phase epitaxy
Liu, YH
Tanabe, T
Miyake, H
Hiramatsu, K
Shibata, T
Tanaka, M
Masa, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L505 - L507
[35] Self-separation of freestanding GaN from sapphire substrates by hydride vapor phase epitaxy
Tomita, K
Kachi, T
Nagai, S
Kojima, A
Yamasaki, S
Koike, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02): : 563 - 567
[36] Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy
Freitas, J. A., Jr.
Mastro, M. A.
Glaser, E. R.
Garces, N. Y.
Lee, S. K.
Chung, J. H.
Oh, D. K.
Shim, K. B.
JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) : 27 - 32
[37] Modeling of GaN hydride vapor phase epitaxy
Meyyappan, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02): : 685 - 688
[38] Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy
Yoshida, Takehiro
Oshima, Yuichi
Watanabe, Kazutoshi
Tsuchiya, Tadayoshi
Mishima, Tomoyoshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2110 - 2112
[39] Growth and characterization of low defect GaN by hydride vapor phase epitaxy
Xu, XP
Vaudo, RP
Loria, C
Salant, A
Brandes, GR
Chaudhuri, J
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) : 223 - 229
[40] In-situ monitoring of GaN growth by hydride vapor phase epitaxy
Martin, D.
Carlin, J.F.
Wagner, V.
Bühlmann, H.J.
Ilegems, M.
Physica Status Solidi (A) Applied Research, 2002, 194 (2 SPEC.): : 520 - 523

← 1 2 3 4 5 →