Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy

被引：4

作者：

Kim, Si-Young ^{[1
]}

Lee, Hyun-Jae ^{[2
]}

Park, Seung-Hwan ^{[3
]}

Lee, Woong ^{[3
]}

Jung, Mi-Na ^{[1
]}

Fujii, Katsushi ^{[2
]}

Goto, Takenari ^{[2
]}

Sekiguchi, Takashi ^{[3
]}

Chang, Jiho ^{[1
]}

Kil, Gyungsuk ^{[4
]}

Yao, Takafumi ^{[2
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond, Pusan, South Korea

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 980, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki, Japan

[4] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 14期

关键词：

Freestanding GaN; Polarity; Chloride vapor phase epitaxy; Zinc compounds; Gallium compounds; POLARITY;

D O I：

10.1016/j.jcrysgro.2010.04.032

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new hydride vapor phase epitaxy (HVPE)-based approach for the fabrication of freestanding GaN (FS-GaN) substrates was investigated. For the direct formation of low-temperature GaN (LT-GaN) layers, the growth parameters were optimized: the polarity of ZnO, the growth temperature, and the V/III ratio. The FS-GaN layer was achieved by gas etching in an HVPE reactor. A fingerprint of Zn out-diffusion was detected in the photoluminescence measurements, especially for the thin (80 mu m) FS-GaN film; however, a thicker film (400 mu m) was effectively reduced by optimization of GaN growth. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2150 / 2153

页数：4

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