Hexagonal binary decision diagram quantum circuit approach for ultra-low power III-V quantum LSIs

被引：0

作者：

Hasegawa, H ^{[1
]}

Kasai, S

Sato, T

机构：

[1] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2004年 / E87C卷 / 11期

关键词：

quantum LSI; quantum devices; binary decision diagram (BDD); nanostructure network; intelligent quantum (IQ) chip;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach for ultra-low-power LSIs based on quantum devices is presented and its present status and critical issues are discussed with a brief background review on the semiconductor nanotechnology. It is a hexagonal binary decision diagram (BDD) quantum logic circuit approach suitable for realization of ultra-low-power logic/mernory circuits to be used in new applications such as intelligent quantum (IQ) chips embedded in the ubiquitous network environment. The basic concept of the approach, circuit examples showing its feasibility, growth of high density nanostructure networks by molecular beam epitaxy (NIBE) for future LSI implementation, and the key processing issues including the device isolation issue are addressed.

引用

页码：1757 / 1768

页数：12

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