Advanced technology steps in the fabrication of GaAs microstrip detectors

被引：0

作者：

Albertz, D ^{[1
]}

Braunschweig, W ^{[1
]}

Karpinski, W ^{[1
]}

Krais, R ^{[1
]}

Kubicki, T ^{[1
]}

Lubelsmeyer, K ^{[1
]}

Rente, C ^{[1
]}

Syben, O ^{[1
]}

Tenbusch, F ^{[1
]}

Toporowski, M ^{[1
]}

Wittmer, B ^{[1
]}

Xiao, WJ ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

来源：

NUCLEAR PHYSICS B | 1998年

关键词：

D O I：

10.1016/S0920-5632(97)00599-9

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

We report on the fabrication of Ga-As microstrip detectors with integrated coupling capacitors and biasing resistors. The characteristics of the dielectrica SiO2 and Si3N4 are compared. The SiO2 layers were fabricated by Evaporation. The Si3N4 layers were grown by plasma enhanced vapour deposition. The IV-properties and the yield of the devices is investigated. First results of ion implanted back side contacts without an annealing step are presented.

引用

页码：438 / 441

页数：4

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