Benchmarking Electrolyte-Gated Monolayer MoS2 Field-Effect Transistors in Aqueous Environments

被引:5
|
作者
Ruehl, Steffen [1 ,2 ]
Heyl, Max [1 ,2 ]
Gaerisch, Fabian [1 ,2 ]
Blumstengel, Sylke [1 ,2 ]
Ligorio, Giovanni [1 ,2 ]
List-Kratochvil, Emil J. W. [1 ,2 ,3 ]
机构
[1] Humboldt Univ, Dept Chem, Dept Phys, Zum Grossen Windkanal 2, D-12489 Berlin, Germany
[2] Humboldt Univ, IRIS Adlershof, Zum Grossen Windkanal 2, D-12489 Berlin, Germany
[3] Helmholtz Zentrum Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany
来源
关键词
electrolyte gated transistors; MoS2; sensor applications; transition metal dichalcogenides; water; LAYER MOS2; DEVICES;
D O I
10.1002/pssr.202100147
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Most electrical sensor and biosensor elements require reliable transducing elements to convert small potential changes into easy to read out current signals. Offering inherent signal magnification and being operable in many relevant environments field-effect transistors (FETs) are the element of choice in many cases. In particular, using electrolyte gating, numerous sensors and biosensors have been realized in aqueous environments. Over the past years, electrolyte-gated FETs have been fabricated using a variety of semiconducting materials, including graphene, ZnO, as well as conjugated molecules and polymers. Above all, using conducting polymers top-performing devices have been achieved. Herein, an approach to use a transition metal dichalcogenide (TMDC)-based monolayer device as a transducing element is presented. Using MoS2 monolayers, it is shown that such electrolyte-gated devices may be regarded as very promising transducing elements for sensor and biosensor applications, enabled by their high sensitivity for environmental changes and the possibility of using the naturally occurring sulfur vacancies as grafting points of biorecognition layers. Furthermore, the behavior of such a device under prolonged operation in a dilute biologically relevant electrolyte such as phosphate buffered saline solution (PBS) is reported.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Fiber-Embedded Electrolyte-Gated Field-Effect Transistors for e-Textiles
    Hamedi, Mahiar
    Herlogsson, Lars
    Crispin, Xavier
    Marcilla, Rebeca
    Berggren, Magnus
    Inganas, Olle
    ADVANCED MATERIALS, 2009, 21 (05) : 573 - +
  • [32] Influence of Humidity on the Performance of Composite Polymer Electrolyte-Gated Field-Effect Transistors and Circuits
    Marques, Gabriel Cadilha
    von Seggern, Falk
    Dehm, Simone
    Breitung, Ben
    Hahn, Horst
    Dasgupta, Subho
    Tahoori, Mehdi B.
    Aghassi-Hagmann, Jasmin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (05) : 2202 - 2207
  • [33] Nernst-Planck-Poisson analysis of electrolyte-gated organic field-effect transistors
    Delavari, Najmeh
    Tybrandt, Klas
    Berggren, Magnus
    Piro, Benoit
    Noel, Vincent
    Mattana, Giorgio
    Zozoulenko, Igor
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (41)
  • [34] Analytical modeling and experimental characterization of drift in electrolyte-gated graphene field-effect transistors
    João Mouro
    Telma Domingues
    Tiago Pereira
    Rui Campos
    Jérôme Borme
    Pedro Alpuim
    npj 2D Materials and Applications, 9 (1)
  • [35] Electronic transport characteristics of electrolyte-gated conducting polyaniline nanowire field-effect transistors
    Lee, Seung-Yong
    Choi, Gyoung-Rin
    Lim, Hyuneui
    Lee, Kyung-Mi
    Lee, Sang-Kwon
    APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [36] Ion-selective electrolyte-gated field-effect transistors: Prerequisites for proper functioning
    Kofler, Johannes
    Schmoltner, Kerstin
    List-Kratochvil, Emil J. W.
    ORGANIC FIELD-EFFECT TRANSISTORS XIII; AND ORGANIC SEMICONDUCTORS IN SENSORS AND BIOELECTRONICS VII, 2014, 9185
  • [37] Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors
    Vaknin, Yonatan
    Dagan, Ronen
    Rosenwaks, Yossi
    NANOMATERIALS, 2019, 9 (06)
  • [38] Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors
    Kumar, V. Kranthi
    Rathkanthiwar, Shashwat
    Rao, Ankit
    Ghosh, Priyadarshini
    Dhar, Sukanya
    Chandrasekar, Hareesh
    Choudhury, Tanushree
    Shivashankar, S. A.
    Raghavan, Srinivasan
    ACS APPLIED NANO MATERIALS, 2021, 4 (07) : 6734 - 6744
  • [39] Contact-dependent performance variability of monolayer MoS2 field-effect transistors
    Han, Gyuchull
    Yoon, Youngki
    APPLIED PHYSICS LETTERS, 2014, 105 (21)
  • [40] Electrical and Chemical Tuning of Exciton Lifetime in Monolayer MoS2 for Field-Effect Transistors
    Pradeepa, H. L.
    Mondal, Praloy
    Bid, Aveek
    Basu, Jaydeep K.
    ACS APPLIED NANO MATERIALS, 2020, 3 (01) : 641 - 647