Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission

被引：10
|
作者：
Potter, RJ [1 ]
Balkan, N
Carrère, H
Arnoult, A
Bedel, E
Marie, X
机构：
[1] Univ Essex, Dept Elect Syst Engn, Photon Grp, Colchester CO4 3SQ, Essex, England
[2] CNRS, LAAS, F-31077 Toulouse 4, France
[3] Inst Natl Sci Appl, CNRS, F-31077 Toulouse 4, France
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期
关键词：
D O I：
10.1063/1.1576511
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of nitrogen fraction on the temperature dependence of GaNxAs1-x/GaAs (x<2.8%) quantum-well emission was investigated using steady-state photoluminescence between 2 and 300 K. At low temperatures, a characteristic S-shape behavior indicative of carrier localization was observed for each of the samples. This is believed to result from the large miscibility gap induced by the nitrogen, which results in structural/compositional fluctuations in the well. In the high temperature regime (T>150 K) where the emission has a linear dependence, a strong reduction in emission temperature dependence was observed with increasing nitrogen. The temperature dependence was modeled using the band anticrossing approach, with the interaction matrix element parameter C-NM (V-MN=-C(MN)root)x and the nitrogen level parameter gamma (E-N=E-N(0)-gammax) used as fitting parameters. (C) 2003 American Institute of Physics.
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页码：3400 / 3402
页数：3
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