Dependence of the binding energy of A(+) centers on quantum-well width in GaAs/AlGaAs structures

被引：5

作者：

Ivanov, YL ^{[1
]}

Petrov, PV ^{[1
]}

Tonkikh, AA ^{[1
]}

Tsyrlin, GÉ ^{[1
]}

Ustinov, VM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2003年 / 37卷 / 09期

关键词：

D O I：

10.1134/1.1610125

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The luminescence of GaAs/AlGaAs multiple-quantum-well structures with different well widths, containing A(+) centers, was studied to determine the dependence of the center binding energy on quantum-well width. It is shown that the binding energy of the A(+) centers increases markedly with decreasing well width, becoming ten times greater in 10-nm-wide wells than in the bulk material. The binding energy of A(+) centers was found to depend on their concentration . (C) 2003 MAIK "Nauka /Interperiodica".

引用

页码：1090 / 1092

页数：3

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