Electron localization by self-assembled GaSb/GaAs quantum dots

被引：59
|
作者：
Hayne, M
Maes, J
Bersier, S
Moshchalkov, VV
Schliwa, A
Müller-Kirsch, L
Kapteyn, C
Heitz, R
Bimberg, D
机构：
[1] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 24期
关键词：
D O I：
10.1063/1.1583853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes. (C) 2003 American Institute of Physics.
引用
收藏
页码：4355 / 4357
页数：3
相关论文
共 50 条
  • [41] Optical control of electron spin dynamics in self-assembled (In,Ga)As/GaAs quantum dots
    Greilich, A.
    Oulton, R.
    Zhukov, E. A.
    Yugova, I. A.
    Yakovlev, D. R.
    Bayer, M.
    Shabaev, A.
    Efros, Al. L.
    Stavarache, V.
    Reuter, D.
    Wieck, A.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (14): : 3719 - 3724
  • [42] Anisotropy of the electron Lande g factor in InAs/GaAs self-assembled quantum dots
    Testelin, C.
    Aubry, E.
    Eble, B.
    Bernardot, F.
    Chamarro, M.
    Lemaitre, A.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 2072 - 2074
  • [43] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Wang, ZG
    Liu, FQ
    Liang, JB
    Xu, B
    SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2000, 43 (08): : 861 - 870
  • [44] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    王占国
    刘峰奇
    梁基本
    徐波
    Science China Mathematics, 2000, (08) : 861 - 870
  • [45] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Zhanguo Wang
    Fengqi Liu
    Jiben Liang
    Bo Xu
    Science in China Series A: Mathematics, 2000, 43 : 861 - 870
  • [46] Polaron relaxation in InAs/GaAs self-assembled quantum dots
    Sauvage, S
    Boucaud, P
    Bras, F
    Fishman, G
    Lobo, RPSM
    Glotin, F
    Prazeres, R
    Ortega, JM
    Gérard, JM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 238 (02): : 254 - 257
  • [47] Electronic structure of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Briddon, PR
    Jaros, M
    PHYSICAL REVIEW B, 1996, 54 (04) : R2300 - R2303
  • [48] Optical charging of self-assembled InAs/GaAs quantum dots
    Karlsson, KF
    Moskalenko, ES
    Holtz, PO
    Monemar, B
    Schoenfeld, WV
    Garcia, JM
    Petroff, PM
    PHYSICA SCRIPTA, 2002, T101 : 140 - 142
  • [49] TEM study of InAs self-assembled quantum dots in GaAs
    Müller, E
    Ribeiro, E
    Heinzel, T
    Ensslin, K
    Medeiros-Ribeiro, G
    Petroff, PM
    THIN SOLID FILMS, 1998, 336 (1-2) : 38 - 41
  • [50] Morphology of self-assembled InAs quantum dots on GaAs(001).
    Arciprete, F
    Patella, F
    Fanfoni, M
    Nufris, S
    Placidi, E
    Schiumarini, D
    Balzarotti, A
    SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 179 - 184
12345