Electron localization by self-assembled GaSb/GaAs quantum dots

被引：59
|
作者：
Hayne, M
Maes, J
Bersier, S
Moshchalkov, VV
Schliwa, A
Müller-Kirsch, L
Kapteyn, C
Heitz, R
Bimberg, D
机构：
[1] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 24期
关键词：
D O I：
10.1063/1.1583853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes. (C) 2003 American Institute of Physics.
引用
收藏
页码：4355 / 4357
页数：3
相关论文
共 50 条
  • [31] Electron and hole localization in coupled InP/InGaP self-assembled quantum dots
    Tadic, M
    Peeters, FM
    Partoens, B
    Janssens, KL
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 237 - 240
  • [32] Electron localization in self-assembled Si quantum dots grown on Ge(111)
    Stepina, N. P.
    Zinovieva, A. F.
    Zinovyev, V. A.
    Deryabin, A. S.
    Kulik, L. V.
    Dvurechenskii, A. V.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
  • [33] Localization of excitons in the wetting layer accompanying self-assembled InAs/GaAs quantum dots
    Babinski, A
    Raymond, S
    Wasilewski, Z
    Lapointe, J
    Potemski, M
    ACTA PHYSICA POLONICA A, 2004, 105 (06) : 547 - 552
  • [34] Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots
    Jiang Zhong-Wei
    Wang Wen-Xin
    Gao Han-Chao
    Li Hui
    Yang Cheng-Liang
    He Tao
    Wu Dian-Zhong
    Chen Hong
    Zhou Jun-Ming
    CHINESE PHYSICS LETTERS, 2008, 25 (07) : 2649 - 2652
  • [35] Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots
    Nowozin, T.
    Marent, A.
    Bonato, L.
    Schliwa, A.
    Bimberg, D.
    Smakman, E. P.
    Garleff, J. K.
    Koenraad, P. M.
    Young, R. J.
    Hayne, M.
    PHYSICAL REVIEW B, 2012, 86 (03)
  • [36] Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
    Fernandez-Delgado, N.
    Herrera, M.
    Chisholm, M. F.
    Kamarudin, M. A.
    Zhuang, Q. D.
    Hayne, M.
    Molina, S. I.
    APPLIED SURFACE SCIENCE, 2017, 395 : 136 - 139
  • [37] Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
    Jiang Zhong-Wei
    Wang Wen-Xin
    Gao Han-Chao
    Li Hui
    He Tao
    Yang Cheng-Liang
    Chen Hong
    Zhou Jun-Ming
    ACTA PHYSICA SINICA, 2009, 58 (01) : 471 - 476
  • [38] Enhanced electron-phonon interaction in InAs/GaAs self-assembled quantum dots
    Minnaert, AWE
    Silov, AY
    van der Vleuten, W
    Haverkort, JEM
    Wolter, JH
    García-Cristóbal, A
    Fomin, VM
    Devreese, JT
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 265 - 268
  • [39] Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots
    Zibik, EA
    Andreev, AD
    Wilson, LR
    Steer, MJ
    Green, RP
    Ng, WH
    Cockburn, JW
    Skolnick, MS
    Hopkinson, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 105 - 109
  • [40] Changes of Photoluminescence of Electron Beam Irradiated Self-assembled InAs/GaAs Quantum Dots
    Maliya
    Abuduwayiti, Aierken
    Li Yudong
    Zhou Dong
    Zhao Xiaofan
    Guo Qi
    Liu Chaoming
    YOUNG SCIENTISTS FORUM 2017, 2018, 10710
12345