High-power 2.3-μm GaSb-based linear laser array

被引：32
|
作者：
Shterengas, L [1 ]
Belenky, GL
Gourevitch, A
Donetsky, D
Kim, JG
Martinelli, RU
Westerfeld, D
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11974 USA
[2] Sarnoff Corp, Princeton, NJ 08543 USA
[3] Power Photon Corp, Stony Brook, NY 11794 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 10期
关键词：
optical pumping; power lasers; quantum-well lasers; semiconductor laser arrays; semiconductor lasers;
D O I：
10.1109/LPT.2004.833920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power 2.3-mum In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-mum-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 mus/300 Hz) at a heatsink temperature of 18 degreesC. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.
引用
收藏
页码：2218 / 2220
页数：3
相关论文
共 50 条
  • [41] Phase-locking of a linear array of high-power laser diodes
    Apollonov, VV
    Derzhavin, SI
    Kuz'minov, VV
    Mashkovskii, DA
    Prokhorov, AM
    Timoshkin, VN
    Filonenko, VA
    QUANTUM ELECTRONICS, 1999, 29 (10) : 839 - 841
  • [42] Comparison of InP- and GaSb-based VCSELs emitting at 2.3 μm suitable for carbon monoxide detection
    Boehm, Gerhard
    Bachmann, Alexander
    Rosskopf, Juergen
    Ortsiefer, Markus
    Chen, Jia
    Hangauer, Andreas
    Meyer, Ralf
    Strzoda, Rainer
    Amann, Markus-Christian
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 442 - 445
  • [43] GaSb-based 2.3 μm quantum-well diode-lasers with low beam divergence
    Rattunde, M
    Schmitz, J
    Kaufel, G
    Wagner, J
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 31 - 32
  • [44] Monolithic 2μm GaSb-based passively mode-locked laser
    Zia, Nouman
    Viheriala, Jukka
    Uusitalo, Topi
    Koivusalo, Eero
    Guina, Mircea
    2020 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS (ECOC), 2020,
  • [45] GaSb-Based Semiconductor Disk Lasers For The 2-3 μm Wavelength Range: Versatile Lasers For High-Power And Narrow Linewidth Emission
    Rattunde, M.
    Roesener, B.
    Kaspar, S.
    Moser, R.
    Manz, C.
    Koehler, K.
    Wagner, J.
    2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), 2010,
  • [46] Influence of GaSb and AlGaInAsSb as Barrier Material on ∼2.8-μm GaSb-Based Diode Laser Properties
    Lehnhardt, T.
    Herrmann, A.
    Kamp, M.
    Hoefling, S.
    Worschech, L.
    Forchel, A.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (06) : 371 - 373
  • [47] High output power GaSb-based diode laser with narrow n-type cladding layer
    Chen Yihang
    Yang Yanzhao
    Wang Tianfang
    Yu Hongguang
    Shi Jianmei
    Zhang Guiming
    Wu Bin
    Yang Chengao
    Zhang Yu
    Xu Yingqiang
    Niu Zhichuan
    SEMICONDUCTOR LASERS AND APPLICATIONS XII, 2022, 12311
  • [48] GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm
    V. P. Khvostikov
    S. V. Sorokina
    F. Yu. Soldatenkov
    N. Kh. Timoshina
    Semiconductors, 2015, 49 : 1079 - 1082
  • [49] Ultra-low-threshold GaSb-based Laser Diodes at 2.65 μm
    Kashani-Shirazi, K.
    Bachmann, A.
    Arafin, S.
    Vizbaras, K.
    Amann, M. -C.
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 1407 - 1408
  • [50] Fiber coupling module for GaSb-based semiconductor laser at 2 μm wavelength
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2022, 51 (08):
12345