High-power 2.3-μm GaSb-based linear laser array

被引：32

作者：

Shterengas, L ^{[1
]}

Belenky, GL

Gourevitch, A

Donetsky, D

Kim, JG

Martinelli, RU

Westerfeld, D

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11974 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

[3] Power Photon Corp, Stony Brook, NY 11794 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 10期

关键词：

optical pumping; power lasers; quantum-well lasers; semiconductor laser arrays; semiconductor lasers;

D O I：

10.1109/LPT.2004.833920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power 2.3-mum In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-mum-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 mus/300 Hz) at a heatsink temperature of 18 degreesC. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.

引用

页码：2218 / 2220

页数：3

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