High-power 2.3-μm GaSb-based linear laser array

被引：32
|
作者：
Shterengas, L [1 ]
Belenky, GL
Gourevitch, A
Donetsky, D
Kim, JG
Martinelli, RU
Westerfeld, D
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11974 USA
[2] Sarnoff Corp, Princeton, NJ 08543 USA
[3] Power Photon Corp, Stony Brook, NY 11794 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 10期
关键词：
optical pumping; power lasers; quantum-well lasers; semiconductor laser arrays; semiconductor lasers;
D O I：
10.1109/LPT.2004.833920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power 2.3-mum In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-mum-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 mus/300 Hz) at a heatsink temperature of 18 degreesC. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.
引用
收藏
页码：2218 / 2220
页数：3
相关论文
共 50 条
  • [1] Fabrication of high-power 2μm GaSb-based laser
    Chen, Yihang
    Zhang, Yi
    Yang, Chengao
    Shang, Jinming
    Xu, Yingqiang
    Tong, Haibao
    Ren, Zhengwei
    Li, Sensen
    Zhang, Yu
    Niu, Zhichuan
    24TH NATIONAL LASER CONFERENCE & FIFTEENTH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS, 2020, 11717
  • [2] Thermal characterization of high-power GaSb-based laser
    Shi, Jianmei
    Yang, Chengao
    Chen, Yihang
    Wang, Tianfang
    Yu, Hongguang
    Zhang, Yu
    Xu, Yingqiang
    Niu, Zhichuan
    SEMICONDUCTOR LASERS AND APPLICATIONS XII, 2022, 12311
  • [3] GaSb-Based QWs 2 μm High Power Laser Diode
    Zhang, Kelu
    Xie, Shengwen
    Zhang, Yu
    Xu, Yingqiang
    Wang, Jinliang
    Niu, Zhichuan
    ADVANCED FUNCTIONAL MATERIALS (CMC 2017), 2018, : 355 - 361
  • [4] High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 μm
    Liao Yong-Ping
    Zhang Yu
    Yang Cheng-Ao
    Huang Shu-Shan
    Chai Xiao-Li
    Wang Cuo-Wei
    Xu Ying-Qiang
    Ni Hai-Qiao
    Niu Zhi-Chuan
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 35 (06) : 672 - 675
  • [5] High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 μm
    Schulz, N
    Rattunde, M
    Manz, C
    Köhler, K
    Wild, C
    Wagner, J
    Beyertt, SS
    Brauch, U
    Kübler, T
    Giesen, A
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3 no 3, 2006, 3 (03): : 386 - 390
  • [6] Self-Consistent Analysis of Quantum Well Number Effects on the Performance of 2.3-μm GaSb-Based Quantum Well Laser Diodes
    Salhi, Abdelmajid
    Al-Muhanna, Abdulrahman A.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 918 - 924
  • [7] 2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor
    D. Donetsky
    J. Chen
    L. Shterengas
    G. Kipshidze
    D. Westerfeld
    Journal of Electronic Materials, 2008, 37 : 1770 - 1773
  • [8] 2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor
    Donetsky, D.
    Chen, J.
    Shterengas, L.
    Kipshidze, G.
    Westerfeld, D.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (12) : 1770 - 1773
  • [9] GaSb-based quantum wells 2 μm high power laser diode
    Liao, Yongping
    Zhang, Yu
    Xing, Junliang
    Yang, Chengao
    Wei, Sihang
    Hao, Hongyue
    Xu, Yingqiang
    Niu, Zhichuan
    Zhongguo Jiguang/Chinese Journal of Lasers, 2015, 42
  • [10] High Spectral Purity High-Power GaSb-Based DFB Laser Fabricated by Nanoimprint Lithography
    Viheriala, Jukka
    Haring, Kimmo
    Suomalainen, Soile
    Koskinen, Riku
    Niemi, Tapio
    Guina, Mircea
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (11) : 1233 - 1236
12345