Reversible wafer bonding for reliable compound semiconductor processing

被引：0
|
作者：
Dragoi, V [1 ]
Glinsner, T [1 ]
Mittendorfer, G [1 ]
Wimplinger, M [1 ]
Lindner, P [1 ]
机构：
[1] E Thallner GMBH, EV Grp, A-4780 St Florian, Austria
来源：
CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reversible wafer bonding is a process enabling reliable compound semiconductor wafer handling for multi-step processes including photolithography, thinning, etching or coating. Two processes using. wax and dry film-adhesives are presented in this paper.
引用
收藏
页码：331 / 334
页数：4
相关论文
共 50 条
  • [1] Temporary and permanent wafer bonding for reliable backside processing of compound semiconductor wafers
    Dragoi, V
    Glinsner, T
    Lindner, P
    Schaefer, C
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 313 - 318
  • [2] SEMICONDUCTOR WAFER BONDING
    LEHMANN, V
    ONG, IWK
    GOSELE, U
    STENGL, R
    MITANI, K
    ADVANCED MATERIALS, 1990, 2 (08) : 372 - 374
  • [3] Semiconductor wafer bonding
    Reiche, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (04): : 747 - 759
  • [4] Semiconductor wafer bonding
    Gosele, U
    Tong, QY
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 : 215 - 241
  • [5] Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas
    Kästner, G
    Breitenstein, O
    Scholz, R
    Reiche, M
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2002, 13 (10) : 593 - 595
  • [6] Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas
    G. Kästner
    O. Breitenstein
    R. Scholz
    M. Reiche
    Journal of Materials Science: Materials in Electronics, 2002, 13 : 593 - 595
  • [7] Strain relaxation in semiconductor wafer bonding
    Tanabe, Katsuaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (05)
  • [8] SEMICONDUCTOR WAFER BONDING - RECENT DEVELOPMENTS
    TONG, QY
    GOSELE, U
    MATERIALS CHEMISTRY AND PHYSICS, 1994, 37 (02) : 101 - 127
  • [9] CONTAMINATION PROTECTION OF SEMICONDUCTOR SURFACES BY WAFER BONDING
    LEHMANN, V
    GOSELE, U
    MITANI, K
    SOLID STATE TECHNOLOGY, 1990, 33 (04) : 91 - 92
  • [10] Semiconductor layer transfer by anodic wafer bonding
    Lee, TH
    Tong, QY
    Chao, YL
    Huang, LJ
    Gosele, U
    1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 40 - 41
12345