Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices

被引:41
|
作者
Ouyang, Jianyong [1 ]
Yang, Yang [2 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
关键词
charge exchange; conducting polymers; contact potential; electrical resistivity; electrodes; gold; nanoelectronics; nanoparticles; polymer blends; polymer films; switches; work function; THIN-FILM; ELECTRICAL BISTABILITY; ORGANIC MATERIALS; ELEMENTS;
D O I
10.1063/1.3324696
中图分类号
O59 [应用物理学];
学科分类号
摘要
Devices with a polystyrene film blended with gold nanoparticles capped with conjugated 2-naphthalenethiol exhibited electrode-sensitive bipolar resistive switchings. The resistances of the two states could be different by almost three orders of magnitude, and the devices could be switched between the two states for numerous times. Thus, these devices can be used as nonvolatile memory devices. The resistive switching voltage is related to the work function of the electrode. The electrode sensitivity of the resistive switchings is attributed to the contact potential at the contact of gold nanoparticles and electrode arising from charge transfer between them.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Laser Fabrication of Polymer Ferroelectric Nanostructures for Nonvolatile Organic Memory Devices
    Martinez-Tong, Daniel E.
    Rodriguez-Rodriguez, Alvaro
    Nogales, Aurora
    Garcia-Gutierrez, Mari-Cruz
    Perez-Murano, Francesc
    Llobet, Jordi
    Ezquerra, Tiberio A.
    Rebollar, Esther
    ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (35) : 19611 - 19618
  • [42] Integration of Flexible and Microscale Organic Nonvolatile Resistive Memory Devices Using Orthogonal Photolithography
    Song, Younggul
    Jang, Jingon
    Yoo, Daekyoung
    Jung, Seok-Heon
    Jeong, Hyunhak
    Hong, Seunghun
    Lee, Jin-Kyun
    Lee, Takhee
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (06) : 6350 - 6354
  • [43] Characterization of PI:PCBM organic nonvolatile resistive memory devices under thermal stress
    Kim, Youngrok
    Yoo, Daekyoung
    Jang, Jingon
    Song, Younggul
    Jeong, Hyunhak
    Cho, Kyungjune
    Hwang, Wang-Taek
    Lee, Woocheol
    Kim, Tae-Wook
    Lee, Takhee
    ORGANIC ELECTRONICS, 2016, 33 : 48 - 54
  • [44] Wavelength dependent light tunable resistive switching graphene oxide nonvolatile memory devices
    Jaafar, Ayoub H.
    Kemp, N. T.
    CARBON, 2019, 153 : 81 - 88
  • [45] Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices
    Wang, Hongjun
    Zou, Changwei
    Zhou, Lin
    Tian, Canxin
    Fu, Dejun
    MICROELECTRONIC ENGINEERING, 2012, 91 : 144 - 146
  • [46] 4K-bit and microlithographic integration of organic nonvolatile resistive memory devices
    Song, Younggul
    Jang, Jingon
    Yoo, Daekyoung
    Jung, Seok-Heon
    Hong, Seunghun
    Lee, Jin-Kyun
    Lee, Takhee
    ORGANIC ELECTRONICS, 2015, 17 : 192 - 197
  • [47] Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers
    You, Yil-Hwan
    Hwang, Jin-Ha
    JOURNAL OF THE KOREAN CERAMIC SOCIETY, 2009, 46 (03) : 336 - 343
  • [48] Composite interfaces and electrode properties of resistive random access memory devices
    Yang Jin
    Zhou Mao-Xiu
    Xu Tai-Long
    Dai Yue-Hua
    Wang Jia-Yu
    Luo Jing
    Xu Hui-Fang
    Jiang Xian-Wei
    Chen Jun-Ning
    ACTA PHYSICA SINICA, 2013, 62 (24) : 248501
  • [49] Electrode dependence of resistive switching in Au/Ni-Au nanoparticle devices
    Zhong, Shuai
    Duan, Sibin
    Cui, Yimin
    RSC ADVANCES, 2014, 4 (77) : 40924 - 40929
  • [50] A Metal Oxide Heterostructure for Resistive Random Access Memory Devices
    廖昭亮
    陈东敏
    Chinese Physics Letters, 2013, 30 (04) : 201 - 204