Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices

被引:41
|
作者
Ouyang, Jianyong [1 ]
Yang, Yang [2 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
关键词
charge exchange; conducting polymers; contact potential; electrical resistivity; electrodes; gold; nanoelectronics; nanoparticles; polymer blends; polymer films; switches; work function; THIN-FILM; ELECTRICAL BISTABILITY; ORGANIC MATERIALS; ELEMENTS;
D O I
10.1063/1.3324696
中图分类号
O59 [应用物理学];
学科分类号
摘要
Devices with a polystyrene film blended with gold nanoparticles capped with conjugated 2-naphthalenethiol exhibited electrode-sensitive bipolar resistive switchings. The resistances of the two states could be different by almost three orders of magnitude, and the devices could be switched between the two states for numerous times. Thus, these devices can be used as nonvolatile memory devices. The resistive switching voltage is related to the work function of the electrode. The electrode sensitivity of the resistive switchings is attributed to the contact potential at the contact of gold nanoparticles and electrode arising from charge transfer between them.
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Resistive Switching and Nonvolatile Memory in TiO2/CuPc Nanocomposite Devices
    Biswanath Mukherjee
    Journal of Electronic Materials, 2019, 48 : 2131 - 2136
  • [32] Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
    Jun Yao
    Jian Lin
    Yanhua Dai
    Gedeng Ruan
    Zheng Yan
    Lei Li
    Lin Zhong
    Douglas Natelson
    James M. Tour
    Nature Communications, 3
  • [33] Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
    Yao, Jun
    Lin, Jian
    Dai, Yanhua
    Ruan, Gedeng
    Yan, Zheng
    Li, Lei
    Zhong, Lin
    Natelson, Douglas
    Tour, James M.
    NATURE COMMUNICATIONS, 2012, 3
  • [34] Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays
    Narayanan, Pritish
    Burr, Geoffrey W.
    Virwani, Kumar
    Kurdi, Bulent
    IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2016, 6 (03) : 330 - 338
  • [35] Metal nanocrystals as charge storage nodes for nonvolatile memory devices
    Yeh, P. H.
    Chen, L. J.
    Liu, P. T.
    Wang, D. Y.
    Chang, T. C.
    ELECTROCHIMICA ACTA, 2007, 52 (08) : 2920 - 2926
  • [36] Significant Effects of Electrode Metal Work Function on Resistive Memory Devices with Gelatin Biodielectric Layer
    Liu, Shuting
    Dong, Shurong
    Jin, Hao
    Huang, Shuyi
    Wang, Xiaozhi
    Luo, Jikui
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2018, 165 (07) : G90 - G95
  • [37] Trends on the Application of Emerging Nonvolatile Memory to Processors and Programmable Devices
    Torres, Lionel
    Brum, Raphael Martins
    Cargnini, Luis Vitorio
    Sassatelli, Gilles
    2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2013, : 101 - 104
  • [38] Nonvolatile electrical bistability and operating mechanism of memory devices based on CdSe/ZnS nanoparticle/polymer hybrid composites
    Li, Fushan
    Son, Dong Ick
    Kim, Bong Jun
    Kim, Tae Whan
    APPLIED PHYSICS LETTERS, 2008, 93 (02)
  • [39] Realization of nonvolatile memory devices using small organic molecules and polymer
    Paul, Shashi
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (02) : 191 - 195
  • [40] Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices
    Tappertzhofen, S.
    Hofmann, S.
    NANOSCALE, 2017, 9 (44) : 17494 - 17504