Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

被引：8

作者：

Zheng, Qi-Wen ^{[1
,2
]}

Cui, Jiang-Wei ^{[1
,2
]}

Zhou, Hang ^{[1
,2
,3
]}

Yu, De-Zhao ^{[1
,2
,3
]}

Yu, Xue-Feng ^{[1
,2
]}

Guo, Qi ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China

[2] Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 07期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0256-307X/33/7/076102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.

引用

页数：3

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