Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

被引：8
|
作者：
Zheng, Qi-Wen [1 ,2 ]
Cui, Jiang-Wei [1 ,2 ]
Zhou, Hang [1 ,2 ,3 ]
Yu, De-Zhao [1 ,2 ,3 ]
Yu, Xue-Feng [1 ,2 ]
Guo, Qi [1 ,2 ]
机构：
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
[2] Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 07期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1088/0256-307X/33/7/076102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
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页数：3
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