Investigation of Thermal Properties of Bulk Zn Doped GaSb and Silicon by Photopyroelectric Technique

The photopyroelectric technique is used for simultaneous investigation of thermal conductivity and diffusivity of Zn doped GaSb, graphite and Silicon. Hence, a specific design of pyroelectric sensor based on PVDF film of thickness of 25 mu m is developed. The best coincidence between theoretical and experimental amplitude and phase of photpyroelectric signal determine simultaously thermal conductivity and diffusivity of available samples which are respectively 0.34 Wm(-1)K(-1) and 1.45 10(-6) m(2)s(-1) for graphite black coating, 131 Wm(-1)K(-1) and 9 10(-5) m(2)s(-1) for silicon and 36 Wm(-1)K(-1) and 3 10(-5) m(2)s(-1) for Zn doped GaSb sample.