Investigation of Thermal Properties of Bulk Zn Doped GaSb and Silicon by Photopyroelectric Technique

被引：1
|
作者：
Abdellaziz, I. [1 ]
Mellouki, I. [1 ]
Yacoubi, N. [1 ]
机构：
[1] IPEIN, UR Photothermy Photothermal Lab, Nabeul, Tunisia
来源：
SENSOR LETTERS | 2009年 / 7卷 / 05期
关键词：
Photopyroelectric; PVDF Sensor; Thermal Diffusivity; Thermal Conductivity;
D O I：
10.1166/sl.2009.1125
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The photopyroelectric technique is used for simultaneous investigation of thermal conductivity and diffusivity of Zn doped GaSb, graphite and Silicon. Hence, a specific design of pyroelectric sensor based on PVDF film of thickness of 25 mu m is developed. The best coincidence between theoretical and experimental amplitude and phase of photpyroelectric signal determine simultaously thermal conductivity and diffusivity of available samples which are respectively 0.34 Wm(-1)K(-1) and 1.45 10(-6) m(2)s(-1) for graphite black coating, 131 Wm(-1)K(-1) and 9 10(-5) m(2)s(-1) for silicon and 36 Wm(-1)K(-1) and 3 10(-5) m(2)s(-1) for Zn doped GaSb sample.
引用
收藏
页码：656 / 660
页数：5
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